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Wafer Level Burn-In
WLBI3810
Wafer Level Burn-in System
WLBI3810 Wafer Level Burn-In System is a high-end burn-in test equipment specifically designed for Silicon Carbide (SiC) and Gallium Nitride (GaN) wafers, featuring efficient and precise testing capabilities. This system can simultaneously perform High-Temperature Gate Bias (HTGB) and High-Temperature Reverse Bias (HTRB) burn-in tests on 9 wafers, with a testing time range from several minutes to thousands of hours, flexibly adapting to the burn-in requirements of different products. This equipment features a fully automated loading and unloading system, incorporates a three-cassette design, supports seamless test mode switching, and automatically adjusts burn-in conditions, ensuring both efficiency and continuity throughout the testing process.
Highlights
  • Automated loading and unloading
    Fully automated wafer handling minimizes manual intervention, boosting efficiency and accuracy
  • Precise probing
    Delivers ±10μm probe mark repositioning accuracy for reliable testing
  • Comprehensive system features
    Supports map data binding for traceability and testing up to 4224 dies simultaneously
  • Multimode burn-in
    Automatically switches between HTGB and HTRB modes
  • Leakage current monitoring
    Igss and Idss leakage current moitoring
  • Integrated testing functions
    Includes Vth parameter testing for in-depth analysis
  • Exceptional measurement accuracy
    Offers maximum resolution of 0.1nA
    Maximum leakage current accuracy 0.5nA
  • Precise temperature control
    Ensures uniformity within ±3℃, accuracy within 1℃, and resolution of 0.1℃
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