Rapid development of SiC power devices
Power semiconductors are the core of electric energy conversion and circuit control of electronic devices. In essence, they are the functions of power switch and power conversion by using the unidirectional conductivity of semiconductors. Most of the chemical energy provided by hydropower, nuclear power, thermal power, wind power, and even various batteries cannot be used directly, and can only be used by equipment after power conversion by power semiconductors. The specific uses of power semiconductors are frequency conversion, phase transformation, voltage transformation, inversion, rectification, amplification, switch, etc. The related products have the function of energy saving and are widely used in the fields of automobile, communication, consumer electronics and industry.
SiC-based power devices have natural advantages in high-power application scenarios. The third-generation semiconductor materials represented by SiC have large bandgap width, high breakdown electric field, high thermal conductivity, and high electron saturation rate. Therefore, the semiconductor devices prepared by SiC have unique advantages in high voltage, high current, high temperature, high frequency, low loss and other application fields.
Yole predicts that the market size of SiC power devices will increase from US $1.09 billion in 2021 to US $6.297 billion in 2027, with a CAGR of 34%, strongly driven by the application of new energy vehicles and photovoltaic fields.
Known Good Die test
KGD (Known Good Die), through burn-in/testing and other methods, removes the chips (core, seed core, tube core) with failure and defect potential related to the previous process production as early as possible before packaging, improves the yield after packaging and meets the requirements of high-density multi-chip packaging, reduces production costs and time, and accelerates the product to market as soon as possible.
SiC KGD Die Handler PB6600
● Strong expandability. The handler with transport part（PB6600)is separated from the test part.
● Six parallel tests. Support up to 6 test stations, different test stations support different test conditions and items.
● Dynamic test 1200V/2000A, satic test 2000V/600A.
● Accurate test results： rt~200℃, accuracy＜±3℃, resolution：0.1℃
● Hard docking. Stray inductance of the dynamic test system≤50nH
● Nitrogen pressure test. The sealed cavity design is adopted for the probe card, with the nitrogen pressure monitoring function, which can maintain pressure and prevent arcing.
● UPH capability >1400pcs. Single test station test time≤1s.
